发明名称 METHOD OF DESIGNING MASK OF COMS CIRCUIT
摘要 PURPOSE:To perform a mask design for a CMOS circuit efficiently by a method wherein a well mask of a single logic CMOS circuit mask is converted. CONSTITUTION:When a two input NAND is needed for a net information, an N-type well mask 102 is generated through a computer treatment for the formation of a CMOS logic circuit mask of the two input NAND. A potential reference connecting section 112 and a potential reference connecting section 114 are connected with a high potential reference and a low potential reference respectively. When a two input NOR is needed owing to a net information, an N-type well mask 202 is generated through a computer treatment for the formation of a CMOS logic circuit mask of a two NOR. A potential reference connecting section 214 and a potential reference connecting section 212 are connected with a high potential reference and a low potential reference respectively. By these processes, a mask necessary for obtaining the CMOS circuit masks of the two input NAND and the two input NOR is only a common mask except their own N-type well mask, thereby man-hours of a mask design and a register, and a memory capacity can be decreased, and therefore a design can be efficiently performed.
申请公布号 JPS63283154(A) 申请公布日期 1988.11.21
申请号 JP19870119412 申请日期 1987.05.15
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YASUFUKU SEIKI
分类号 H01L21/82;H01L21/8238;H01L27/08;H01L27/092 主分类号 H01L21/82
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