AMORPHOUS SEMICONDUCTOR, AMORPHOUS SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To reduce the deterioration in electric characteristics of amorphous semiconductor by a method wherein the film depositing process is temporarily stopped halfway to be resumed after exposing the film to hydrogen radical atmosphere. CONSTITUTION:A silicon amorphous semiconductor thin film is formed by depositing itself on a substrate using the reactive sputtering process assuming silicon or silicon compound as a target or leading-in a gas or an impurity containing the objective constituent elements. Then, during the film depositing process or after depositing the film, the amorphous semiconductor film is exposed to hydrogen radical atmosphere while the coupling state of atoms in the film especially the coupling mode of hydrogen in the film as well as the value thereof are changed. Through these procedures, the stability against light irradiation can be enhanced.