PRODUCTION OF THIN FILM TRANSISTOR ARRAY

摘要

PURPOSE:To form good electrical connections without eaves and to improve the yield of a transistor array by subjecting two-layered films consisting of SiO2 and Si3N4 films to RIE by using CF4 and O2. CONSTITUTION:ITO layers 1 are selectively deposited on a glass plate 7 and SiO2 is superposed as a transparent insulating layer 8 over the entire surface. Cr layers 2 for scanning signal lines in common use as gate electrodes are then selectively provided thereto. An Si3N4 9 is thereafter provided over the entire surface by a plasma CVD method. A resist mask 20 is formed on the surface and the substrate is set to a parallel flat plate type RIE device, in which CF4 and O2 are passed to bore apertures 4 in the layers 9, 8. Since the etching rate of SiO2 is lower than the etching rate of Si3N4, the apertures 4 are formed satisfactorily without generating the eaves. The defective connections of Al video signal lines 5 in common use as drains and the ITO 1 and the defective connections of the Al layer 6 in common use as the taking out electrode of the scanning signal lines 2 and the scanning signal lines 2 are decreased and the yield of the transistor array is improved.