| 摘要 |
PURPOSE:To prevent a film from isolating at the time of growing the film by forming a protective film of a thin film transistor by a CVD method using mixture gas of a-Si:H-NH3-H2. CONSTITUTION:An Mo gate electrode 2 is formed on a glass substrate 1, covered with two layer film 3 of an a-Si:H and Si3N4, superposed with an Si layer 4, and patterned with a predetermined channel width. A source electrode 5 and a drain electrode 6 are formed to form a thin film transistor 10. Then, an Si3N4 protective film 11 is formed by a CVD method with mixture gas of three components of a-Si:H-NH3-H2. According to this structure, even if a substrate temperature is set to a low value, a dense and hard Si3N4 film is obtained, the substrate temperature at the time of growing a film is reduced to alleviate the thermal influence to the transistor, thereby preventing the protective film from isolating. |
