| 摘要 |
PURPOSE:To determine with ease if a bump meets specifications by a method wherein a mark relevant to the bump geometry is installed in a region in the vicinity of the bump. CONSTITUTION:An Al layer is formed by vaporization on a semiconductor substrate 1 and resist is applied thereto. The resist is provided with a region which has been hardened after exposure through a mask with a translucent sector corresponding to the pattern of a would-be Al wiring layer 3, and serves as a mask in a process of etching the Al layer into an Al wiring layer 3. When a region for a mark 7 for telling the geometry of a bump is assigned in a region shielded from light, a mark 7 is produced after etching wherein an insulating film 2 is exposed. Presence of a mark 7 in the vicinity of a bump 6 in the Al wiring layer 3 facilitates the determination whether the bump 6 meets specifications, which is done by finding out whether the outer periphery of the bump 6 is within the width of the mark 7.
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