| 摘要 |
PURPOSE:To make easy quantitative analysis of contaminated org. matter with good reproducibility by including a stage for immersing a sample into an aq. soln. in which an oxidative gas is dissolved, then projecting UV rays to the surface of this sample and a stage for measuring the resistivity of said aq. soln. CONSTITUTION:A UV ray lamp 104 is lighted to oxidize the org. matter on the surface of a silicon substrate 101 upon ending of an initial measurement. The concn. of the carbon dioxide formed by reaction of the carbon in the org. matter and the oxygen in the pure water increases in the pure water on progressing of oxidation and the resistivity of the pure water decreases correspondingly. The resistivity rho(t) and temp. T(t) of the pure water are measured at every specified period of time after the lighting of the UV lamp and the resistivity rhoc(t) when corrected to the resistance value at 25 deg.C is calculated. The resistivity rhoc(t) of the pure water attains a specified value when the org. matter is completely oxidized. The UV light is put out at the point of the time when the value of rhoc(t) shows no changes any longer. The resistivity of the pure water at 25 deg.C after the end of the oxidation is designated as rhoc(infinity ). The temp. C(infinity ) of the carbon dioxide in the pure water after the oxidation is known from this rhoc(infinity ) value. The amt. of the carbon in the org. contamination on the surface of a silicon substrate 101 can be calculated.
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