| 摘要 |
PURPOSE:To prevent a signal readout error by a method wherein a shield wire is formed in a self-alignment manner in relation to a bit wire. CONSTITUTION:An insulating layer 2 and bit wires 3 are formed on a semicon ductor substrate 1. The bit wires 3 are coated with an insulating layer 4a such as an oxide film through a CVD method or the like. A recessed part provided between bit wires in the layer 4a is expanded through an anisotropic etching so as to be adequate in size. Therefore, the recessed part is formed in a self- alignment manner at a distance equal from both the adjacent bit wires 3. Next, a conductive layer is formed onto the whole surface of the layer 4a, which is subjected equally to etching so as to leave a shield wire 5 in the recessed part between the bit wires. Thereafter, a resist layer is provided, then patterning is performed to remove a shield wire between the bit wires 3, which are to be paired, through etching. Then, the resist layer is removed, and an insulating layer 4b is formed besides thereon to accomplish the bit wires. By these processes, capacitance between bit wires is prevented from being unbalanced, and the effect of a shield wire is noticeably shown, and thus a signal readout error can be prevented. |
