| 摘要 |
PURPOSE:To obtain a semiconductor nonvolatile memory having high reliability by selectively forming an epitaxial layer on a floating gate electrode and an electrode formed in a semiconductor to be injected and discharged with charge, and thermally oxidizing the epitaxial layer to form a tunnel oxide film. CONSTITUTION:A P-type Si substrate is isolated by an SiO2 film 2 to form a gate oxide film 3. An N<+> type drain layer 4 is formed by opening, SiH2Cl2+ H2 is used as reaction gas, and an Si layer 5 is selectively superposed only on the layer 4 by a plasma CVD method. A tunnel oxide film 6 is formed by thermally oxidizing. Thereafter, a polysilicon floating gate electrode 7, an SiO2 film 8, a polysilicon control gate electrode 9 are deposited, and patterned. Then, As ions are implanted to form an N<+> type source region 10 and an N<+> type drain region 4. The film 6 is not affected by the influences of defects due to ion implanting and O concentration in the substrate 1, but a writable/erasable nonvolatile memory having excellent characteristics is obtained.
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