| 摘要 |
PURPOSE:To make it possible to remove an interfacial level existing on the interface between compound semiconductors by a method wherein the selective growth interface or regrowth interface between the compound semiconductors is annealed by ion-implanting such electrically inactive atoms as fluorine F. CONSTITUTION:An n<+> GaAs layer 12 is selectively grown on an n-type GaAs layer 11 and thereafter, F ions are implanted. In this case, an accelerating voltage is selected in such a way that a projection range is in the vicinity of the interface between semiconductors 12 and 11. Moreover, a dose is 10<13>cm<-2>-10<15>cm<-2> or thereabouts. After that, SiO2 and so on are adhered by an organometallic chemical deposition method and are annealed for about 1 hours at about 400-600 deg.C or more. By such a way, the interfacial level existing on the interface between the semiconductors 11 and 12 is disappeared.
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