| 摘要 |
PURPOSE:To obtain a fine resist pattern by using a specific phenol novolak resin and arom. azide compd. which absorbs light of a specific wavelength range to constitute a negative type photoresist compsn. adequate for lithography by deep UV and excimer laser. CONSTITUTION:The substd. phenol novolak resin consisting of a mixture composed of the phenols expressed by the formula and formaldehyde and the arom. azide compd. which absorbs light of <=350mm wavelength are used at the time of forming the negative type photoresist compsn. In the formula, R1 denotes an alkenyl group or alkenyloxy group; R2 denotes a hydrogen atom., hydroxyl group, alkyl group, alkenyl group or alkoxy group. Phenols contain a substituent having carbon-carbon double bonds and is, for example, 2-(1-propenyl)phenol, etc. 4,4'-diazide diphenyl sulfide, etc., are used for the arom. axide compd. |
