| 摘要 |
PURPOSE:To prevent device outage by a method wherein a well opposite to the substrate in the type of conductivity is formed, corresponding to a bonding pad, in a semiconductor substrate. CONSTITUTION:A semiconductor substrate 1 is kept at OV when it is of the P type and a well 6 therein is of the N type. Accordingly, even in the presence of a leak between an aluminum bonding pad 4 and the well 6 due to performance-degrading cracks or the like in a field oxide film 2 or in an insulating layer 3, there will be no current flow. It is because a voltage of only 0-5V will be supplied to the well 6 and this results in a reverse direction voltage application. The semiconductor substrate 1 is kept at 5V when it is of the N type and the well 6 is of the P type. Even in the presence of a leak between the pad 4 and well 6 due to cracks in the field oxide film 2 or in the insulating layer 3, there will be no current flow. It is because a voltage of only 0-5V will be supplied to the well 6 and the N-P junction between the semiconductor substrate 1 and the well 6 will be exposed to a reverse direction voltage only. This design prevents a semiconductor device from defective performance or outage.
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