| 摘要 |
PURPOSE:To prevent the generation of a defective element having short-circuit between a collector and emitter and so on by a method wherein an ion- implantation process is divided and conducted twice or more times at the time of formation of a base, and the orientation of a semiconductor substrate is changed with respect to an ion-implantation direction during the processes. CONSTITUTION:A resist film 6 is patterned and thereafter, boron ions are implanted, but at this time, a semiconductor substrate 1 is revolved by a prescribed angle with the normal direction 11 of the main surface of the substrate 1 as the axis during the implantation. By revolving the substrate like this, an implantation beam 71 is applied at a certain time, but the implantation beam is applied in the same way as an implantation beam 72 at another time as well. Accordingly, an unimplanted part 81 which occurs due to the implantation beam 71 is implanted by the implantation beam from the direction of the beam 72, and the occurrence of the part 81 is inhibited. Thereby, the occurrence of defective elements having short-circuit between a collector and an emitter and so on can be prevented.
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