| 摘要 |
PURPOSE:To enhance the quality of a film synthesized in a vapor phase and simultaneously to increase the film forming rate by separating a plasma chamber into the sections for the different gases to be injected, converting the gases into plasmas, and allowing the plasmas to react with each other on a substrate. CONSTITUTION:A gas and a high-frequency power 14 are supplied into the plasma chamber 15 to generate the plasma, and another gas is also converted into the plasma in the plasma chamber 16. The plasmas are injected from the small holes 17 and 18 provided to the chamber 15 and 16, and a thin film is formed by vapor phase synthersis on the substrate 19 arranged within the mean free path length of the plasma particles from the small holes 17 and 18. Since the kinds of the gases introduced into the plasma chambers 15 and 16 differ from each other, the purity of the plasma is high, and a high-quality film can be formed. Moreover, since the different gases are allowed to react with each other, the ions converted into plasma excited on the substrate 19 react with each other, and the film forming rate can be increased.
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