| 摘要 |
PURPOSE:To expose only a high impurity density region at an outermost side part by a method wherein the high impurity density region which has been formed selectively on a substrate of a low impurity density semiconductor is filled with a low impurity density growth layer and, after that, the growth layer is removed to form step-shaped. CONSTITUTION:Distortion-corrected p<+> regions 5 are grown on one face of a silicon n<-> type substrate 3. Then, the p<+> regions 5 are etched; a p-layer 2 is grown on the whole left surface in such a way that a p-n junction between the silicon n<-> type substrate 3 and the p<+> regions 5 and the p-layer 2 is situated on an identical plane; a distortion-corrected n<+> layer 1 is grown on the layer. Then, one part is etched to be step-shaped from either of these faces; distortion- corrected p<+> layers 6 are formed on the exposed p<+> regions 5. Furthermore, a distortion-corrected n<+> layer 4 is diffused on the whole rear surface of the silicon n<-> type substrate 3; lastly, metals 7 are attached as individual electrode terminals; as a result, a transistor is completed.
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