| 摘要 |
PURPOSE:To stabilize a potential of a semiconductor substrate and to eliminate a latch-up of a parasitic thyristor by forming a high-concentration impurity region which pierces a single-crystal semiconductor film. CONSTITUTION:An impurity region 8 of an identical conductivity type which reaches a semiconductor substrate 5 from the surface of a single-crystal semiconductor film is formed. A power-supply electrode is formed on the surface of the region 8. By this setup, a potential of the substrate 5 is stabilized via the power-supply electrode which has been formed on the surface of an ordinary wafer. As a result, a potential of an epitaxial layer 6 is stabilized; accordingly, a latch-up of a parasitic thyristor which has been formed in the epitaxial layer 6 is eliminated.
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