| 摘要 |
PURPOSE:To reduce a leakage current between a source and a drain by a method wherein a heteropolar impurity is doped only to a lowerpart interface between the source and the drain of a polycrystalline silicon film to become an active layer of a thin-film transistor. CONSTITUTION:After a polycrystalline silicon thin film 12 has been evaporated onto a Pyrex glass substrate 11, ions of boron are implanted. Then, a silicon oxide film 13 to become a gate insulating film is deposited and annealed in an atmosphere of oxygen. Then, a polycrystalline silicon film 14 is deposited; after that, a silicon oxide film 15 is deposited on the film; after that, a gate electrode is formed. Then, ions of phosphorus are implanted; after that, a silicon oxide film 16 to become an interlayer insulating film is deposited and annealed in an atmosphere of nitrogen. Then, contact holes 17 and 18 at a source part and a drain part are made; AlSi is deposited; after that, a source electrode 19 and a drain electrode 20 are patterned. |
