| 摘要 |
PURPOSE:To obtain a negative type resist material having high resolution and excellent dry etching resistance by using a polymer into which a specific structural unit is incorporated. CONSTITUTION:The polymer into which the structural unit expressed by formula (X is Cl, alkyl of 1-10C; Y is alkyl or aryl of 1-10C) is incorporated and is used as the resist material. Such polymer has a high sensitivity to high energy rays such as electron rays and gamma rays and is crosslinked when irradiated with such rays. The polymer is thus used as a negative type resist. Since the polymer hardly swells for its structure, the polymer is hardly affected by mol.wt. and mol.wt. distribution; the higher mol.wts., are more preferable in terms of the higher sensitivity to the electron rays. The excellent negative type resist having the high resolution is obtd. by using such polymer and is used for production of, for example, integrated circuits, magnetic bubbles, printing plates, shadow masks, etc. |
