| 摘要 |
PURPOSE:To efficiently form a general-purpose functional deposited film having superior optical and electrical characteristics when a deposited film is formed by microwave plasma CVD, by adding a prescribed amt. of chalcogenide-contg. gas to gaseous starting material. CONSTITUTION:A reactor 201 is evacuated to <=10<-6> Torr and a cylindrical support 205 is heated 207 to a prescribed temp. of 50-400 deg.C. Prescribed gaseous starting material ad chalcogenide-contg. gas are introduced 208 into a discharge space 206 until the space 206 attains to a prescribed internal pressure of <=10m Torr. Microwave energy is then introduced 202 into the space 206 so that the energy is applied to the introduced gaseous starting material for forming a film by an amt. 1.1-5 times the amt. of microwave energy required to deposit a film at the max. rate. The gaseous starting material and chalcogenide-contg. gas are decomposed and a prescribed amorphous semiconductor film of high quality is formed on the support 205. |
