| 摘要 |
PURPOSE:To improve the responsibeness of an emitter follower amplifier to a sudden current driving between loads which is a small size and low consuming power and to secure the gain of an emitter earthing amplifier even in terms of direct current by using a MOSFET to a constant voltage generating circuit device. CONSTITUTION:The title device is constituted of an emitter amplifier circuit 3 to build in an npn bipolar transister Q2 and a p-channel enhancement type MOSFET element M1, a feedbacking circuit 2 to build in a resistance elements R1 and R2 corresponding with a transister Q2 and of an emitter earthing amplifier element 1 to build in an npn bipolar transister Q1 to an element M1. In this constitution, an input terminal 11 is connected to the corrector of the transister Q2 and an output terminal 12 is connected to an input contact D of an emitter follower amplifier respectively. Thus, when an electric potential V12 of the terminal 12 is changed, the drain current of the element M1 is promptly changed, the base current of the transister Q1 is reduced and the electric potential V12 is returned to be original.
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