| 摘要 |
PURPOSE:To improve a saturation voltage characteristic of a transistor by a method wherein a connection of an emitter electrode of the transistor is executed outside a semiconductor integrated circuit. CONSTITUTION:Electrodes of a first transistor T1 are arranged in the following manner: a base 1B in the center; two emitters 1E1, 1E2 on both sides of the base; two collectors 1C1, 1C2 at external sides of the emitters. Electrodes of a second transistor-an n-th transistor T2-Tn are arranged in the same manner; if the respective collectors, bases and emitters are connected, it is possible to increase a size of an effective transistor. In this case, a distance between the collector electrode and the emitter electrode becomes the shortest; the distance from a point B to each base electrode becomes the shortest; it is possible to reduce a voltage drop to a minimum. Each emitter electrode is connected to an external electrode via a PAD; the point B is connected to other devices inside a semiconductor integrated circuit.
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