| 摘要 |
PURPOSE:To grow a second superconducting film on a first superconducting film continuously and easily by a method wherein, when the first superconduct ing film and the second superconducting film are laminated via an insulating thin film by using a vapor phase method, the second superconducting film is connected physically to one part of the first superconducting film. CONSTITUTION:A first superconducting thin film 2 with a thickness of about 10 nm is formed on an MgO single crystal substrate 1 at 400 deg.C in Ar gas by a sputtering method by using a target of a Y-Ba-Cu-O-related oxide. Then, while a mask is set on the first superconducting thin film 2 and a target of SrTiO3 is used, an insulating thin film 3 with a thickness of 5 nm is formed. Then, the mask is removed; the target of the Y-Ba-Cu-O-related oxide is used again; a second superconducting thin film 4 similar to the first film is laminated. During this process, also a superconducting layer 5 is formed. When this assem bly is to be used, the superconducting layer 5 is removed; the first superconduct ing thin film 2 is exposed; electrodes 8, 9 are formed. |
