| 摘要 |
PURPOSE:To obtain a flat, sharp, and high-quality crystal having a hetero interface and free of impurities and defects by applying first epitaxy on a substrate held at a specified temp., then heating the substrate, allowing the substrate to stand at a high temp., and then applying second epitaxy. CONSTITUTION:Molecular beam sources 20-22 of the elements constituting a desired crystal (e.g., Ga, Al, and As are respectively charged) and a substrate holder 3 holding a substrate 4 of GaAs, etc., and whose temp. can be controlled are arranged in the growth chamber 1 of a crystal growth device by molecular beam epitaxy held at an ultrahigh vacuum by a vacuum pump 9. The molecular beam sources 20-22 are set at a specified temp. A first atom or molecule is deposited by the first epitaxy on the substrate 4 kept at a specified temp. (e.g., 600 deg.C) by controlling shutters 5 before the molecular beam sources 20-22. The growth is then stopped, the substrate 4 is then heated to a high temp. (e.g., 680 deg.C) and allowed to stand at that temp., then the substrate 4 is set at the original temp. (e.g., 600 deg.C), a second atom or molecule is grown by the second epitaxy while adjusting the shutter 5, and the process is repeated, as required.
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