| 摘要 |
PURPOSE:To control the sputtering rate by an ion beam and to form a good- quality film by using the title device capable of controlling the incident angle of the ion beam to a cylindrical material and capable of forming a film by ion implantation or mixing. CONSTITUTION:In the ion beam mixing device (Fig. a) consisting of a vacuum vessel 2, an ion source 3 and an exhaust 4, the ion beam 9 drawn out from the ion source 3 is injected on the outer periphery of the cylindrical sample 7 with some divergent angle. In this case, a barrier 8a is arranged around the sample 7 rotating in direct connection to a sample holder 1. Accordingly, the incident angle of the beam to the sample 7 is determined by the opening width (l) of the barrier 8b as shown in Fig. b, and the incident angle theta is expressed by the equation. At this time, sputtering is carried out on the surface of the sample 7 simultaneously with the ion implantation. Consequently, if the angle to the sample surface is controlled to about theta <=30 deg.,a good quality film can be obtained without being relatively sputtered.
|
