| 摘要 |
PURPOSE:To obtain a semiconductor laser device whose aberration is low and whose output is high by installing a graded index distribution semiconductor layer whose refractive index is low in the central part and becomes large in accordance with a distance from the central part toward a film-thickness direction. CONSTITUTION:A first multilayer semiconductor is formed on a semiinsulating i-GaAs substrate 1 by an MBE method in such a way that i-GaAlAs 2, p- GaAlAs 3 whose mixed crystal ratio of AlAs is large in the central part and is continuously changed to be small in accordance with a distance from the central part, i-GaAlAs 2 and i-GaAs 4 are grown in succession. Then, a stepped part reaching the substrate 1 is formed on the right side by a dry etching method; a second miltilayer semiconductor containing a p-GaAlAs clad layer 5, an i-GaAlAs active layer 6, an n-GaAlAs clad layer 7 and an n-GaAs layer 8 is formed by an MBE method. Then, a groove 9 with a depth reaching the i-GaAs 4 is formed.
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