| 摘要 |
PURPOSE:To remarkably increase the growth rate of thin diamond film by heating a gas by high-frequency induction heating to form a plasma jet, supplying a gaseous hydrocarbon into the jet, heating the gas at an ultrahigh temp. to convert the gas into a radical, and allowing the radical to collide with a substrate to be treated. CONSTITUTION:A high-frequency current (electric power source 3) is passed through the induction coil 2 provided around a water-cooled pipe 1 through which a plasma generating gas 8 is passed to heat the gas 8 to a high temp., hence a plasma jet is formed. The gaseous hydrocarbon 9 is introduced into the plasma jet, and the gas is converted into a radical. The gas contg. the radical is allowed to collide with the substrate 5 to be treated, and a thin diamond film is formed on the substrate 5.
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