| 摘要 |
PURPOSE:To deposit a smooth thin film with high reproducibility and uniformity and to improve selectivity during selective growth of a thin by holding a substrate between blocks placed opposite to each other at a narrow interval and heated to different temp. so that the surface of the substrate subjected to deposition confronts the block on the higher temp. side and by carrying out vapor growth. CONSTITUTION:An Si oxide film 42 si formed on an Si substrate 41, a resist mask pattern is formed on the film 42 and the film 42 is etched form an opening 43. Immediately before a metal such as Al is deposited, a naturally oxidized film 44 is removed by surface cleaning to obtain a wafer substrate 47, 8. This substrate 47, 8 is held with a holder 7 between block 10, 14 placed opposite to each other at a narrow interval and heated to different temps. so that the surface of the substrate subjected to deposition confronts the block 10 on the higher temp. side. A gaseous compd. contg. a metal such as Al is then introduced into a deposition chamber 1 and the metal such as Al 45 is selectively deposited only in the opening 43 in the substrate 47, 8. Since the gaseous compd. on the surface of the substrate 47, 8 can highly be supersatd., a smooth high quality film can be deposited.
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