| 摘要 |
PURPOSE:To prevent the increase in source resistance, to improve drain breakdown strength and, at the same time, to suppress the increase in gate resistance due to reduction in gate length by a method wherein a source-side high concentration region is formed at the position separated in the arbitrary distance L1 from a gate electrode, a drain-side high density region is formed at the position separated from the gate electrode in the arbitrary distance L2, and the L2 is made longer than the L1. CONSTITUTION:A resist 252 is left on the drain side of a gate electrode, and when high concentration regions 27 and 28 are formed by ion-implanting in high concentration the impurities which become a conductivity type the same as that of an active layer 22 using resists 251 and 252 and gate electrodes 23 and 24 as masks, the high concentration region 28 on the drain side is separated from the gate electrode in the length (alpha) by the resist 252. After the resists 251 and 252 have been exfoliated, high melting point metal 23 is etched to the extent of (b) using high melting point metal 24 as a mask, and the high melting point metal 23 is formed at the position separated from the source side high concentration region 27 in the distance (b) and also separated from the drain side high concentration region 28 in the distance (a+b).
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