| 摘要 |
PURPOSE:To inhibit the abnormal blistering of a film, and to prevent the variation of element characteristics by implanting the ions of As<+>, Si<+>, etc., into polycrystalline silicon immediately before a polycrystalline silicon layer is coated with an silicide layer and changing a section near the polycrystalline surface into an amorphous state. CONSTITUTION:An insulator layer 2 is formed onto an silicon semiconductor substrate 1. The insulator layer 2 is shaped through a method such as a thermal oxidation method, and an opening for forming an emitter required as a transistor is shaped at a specified position and the surface of the semiconductor substrate 1 is exposed. A polycrystalline silicon layer 3 containing an element such as As is deposited, the layer 3 is protected by a CVD insulating film 4, and As is diffused in desired depth in a nitrogen atmosphere to form an n<+> diffusion region 5. The CVD insulating film 4 as an uppermost layer is removed, and As<+> ions are implanted in order to bring the polycrystalline silicon layer 3 to an amorphous state. A compound such as MoSi 6 is coated as silicide layers. The silicide layers 6 are patterned in order to be utilized as a polycide wiring 7' and an electrode 7.
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