发明名称 |
Titamium nitride sputter targets. |
摘要 |
<p>The present invention provides a sputter target for the deposition of titanium nitride films. The sputter target has a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride. The sputter target is prepared by subjecting titanium nitride powder to hot isostatic pressure.</p> |
申请公布号 |
EP0291278(A2) |
申请公布日期 |
1988.11.17 |
申请号 |
EP19880304229 |
申请日期 |
1988.05.10 |
申请人 |
VARIAN ASSOCIATES, INC. |
发明人 |
BRAT, THEODORO E.;WICKERSHAM, CHARLES E. |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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