| 摘要 |
<p>A two-terminal semiconductor diode (18) device and method for manufacturing the same is disclosed. The semiconductor diode geometry is defined by mesa etching. An ohmic contact (20) is disposed on the flat topped summit (27) of the mesa and another ohmic contact (25) in the shape of a ring is disposed on the bottom layer (29) of the diode. A dielectric layer (30) disposed over the diode has a via hole (50) therethrough to make external contacts to a metallic heat sink and ground. A substrate layer (11) supports the semiconductor diode and has a second offset via hole (40) therethrough to the ring contact for external circuit contact and biasing of the diode. The offset via hole simplifies the manufacturing process. Additionally, the active area of the diode makes direct contact to the heat sink improving heat transfer from the device.</p> |
