| 摘要 |
A method is provided for producing patterned metal contacts having a thickness of up to 3 mu m. The method is based on a lift-off technique in which the photosensitivity of the upper layer of a photoresist layer (2) is modified by exposure to chlorobenzene. The photoresist layer (2) prepared in this way is patterned and covered with a thick metal layer (5). A channel (6) is generated through the metal layer (5) and lays bare an edge (4) and a resist bead (3) produced as a consequence of the chlorobenzene treatment. As a result of the channel (6), the photoresist layer (2) is dissolved and the metal layer (5) on top of it is lifted off. <IMAGE>
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