| 摘要 |
PURPOSE:To improve perpendicular magnetic anisotropy by forming a nonmagnetic metallic film and perpendicularly magnetized Co-O film successively on a nonmagnetic base. CONSTITUTION:The nonmagnetic metallic film 2 and the perpendicularly magnetized Co-O film 3 are successively formed on the nonmagnetic base 1. Any metals, such as, for example, Ti, Ge, Zr, and Si, which can be deposited by evaporation, provide dense film structure and can sufficiently suppress release of gases from the nonmagnetic base are adaptable as the nonmagnetic metallic film 2. Namely, the generation of the gases (O2, H2O, etc.) from the nonmagnetic base can be suppressed by forming the nonmagnetic metallic film having the dense film structure as an underlying film on the nonmagnetic base. The perpendicular magnetic anisotropy of the perpendicularly magnetized Co-O film is thereby improved and the improvement in the electromagnetic conversion characteristics is contrived.
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