| 摘要 |
PURPOSE:To obtain bonding at low pressure and a low temperature with high yield and high reliability by forming at least one joint surface of a pair of bodies electrically oonnected through a low-melting-point joint metal by a plurality of raw materials having different physical properties. CONSTITUTION:A joint surface 2 is shaped onto a substrate 1 consisting of glass. A substance such as tin 3 having a large electrical junction degree is formed at the end section of the periphery of the joint surface 2 and a substance such as I.T.O 4 having a large mechanical junction degree at a central section in thickness of approximately 2000Angstrom respectively. A low melting-point active alloy, in which a metal In lowering the melting point is added to elements such as Sb, Zn, Sn and Pb and which has the solftening point of 134 deg.C and the melting point of 160 deg.C, is thermocompression-bonded with the joint surface 2. An active metallic layer 6 is shaped. Thermocompression bonding is conducted in such a manner that load of approximately 10-100kg/cm<2> is applied while the active metallic layer 6 is heated at approximately 140-150 deg.C and the layer 6 is plastically deformed and contact-bonded. A semiconductor element 8 with an electrode such as an Al-Si electrode 7 is thermocompression-bonded, thus completing bonding with high reliability.
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