| 摘要 |
PURPOSE:To reduce the dispersion of outputs even when film thickness differs among each photodetector by bringing transmitted light obtained by the photodetectors to the integral values of all transmitted light by forming irregularities onto the photodetectors. CONSTITUTION:When reading circuit sections 7 are arranged and shaped onto a single crystal semiconductor substrate of one conductivity type through semiconductor manufacturing engineering normally used for thermal oxidation, photoetching, ion implantation, thermal diffusion, etc., wells are shaped while photodetectors 6 are formed. LOCOSs conducting the element isolation of CMOS circuits are also shaped onto the photodetectors, thus forming irregular structure even in the surfaces of the photodetectors. SiO2, SiN, PSG (Phospho Silicate Glass) or the like is formed as a transparent protective film 2 in order to protect the photodetectors and the reading circuits from external environment at the final stage of the process. Accordingly, structure in which irregularities are shaped onto the photodetectors finally is formed through the process in which the CMOS circuits are shaped.
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