发明名称 X-ray mask made from silicon combined with silicon nitride layers, and process for the production thereof
摘要 In an X-ray mask made from silicon combined with silicon nitride layers, a silicon membrane (3) has been removed completely in the area of the adjustment (alignment) marks, where a thin silicon nitride layer (1) takes on the support function and simultaneously serves as adhesion layer for the starting layer (7) necessary in the case of absorber structuring by electrodeposition or directly for the absorber in the case of subtractive structuring. <IMAGE>
申请公布号 DE3715865(A1) 申请公布日期 1988.11.17
申请号 DE19873715865 申请日期 1987.05.07
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV 发明人 BETZ,HANS,DR.-ING.;CSEPREGI,LASZLO,DIPL.-ING.;HUBER,HANS-LUDWIG,DIPL.-PHYS.DR.;WINDBRACKE,WOLFGANG,DR.PHYS.
分类号 G03F1/14;G03F1/22;G03F9/00;(IPC1-7):G03F1/00;H01L21/203;C23C30/00 主分类号 G03F1/14
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