| 摘要 |
PURPOSE:To obtain the characteristics similar to the ideal negative resistance characteristics for a resonant tunneling hot electron transistor by a method wherein a high concentration doping is conducted on a base layer and an emitter layer, the negative resistance characteristics are generated, and the material having the energy band gap wider than that of the base layer is used as the material constituting the emitter layer. CONSTITUTION:The title semiconductor device is constituted by providing the opposite conductivity type compound semiconductor base layer (for example, p<+> type GaAs base layer 13), on which a high concentration doping is conducted to the degree that tunnel diode characteristics will appear, which is formed on one-conductivity type compound semiconductor collector layer (for example, n-type GaAs collector layer 12) and the one-conductivity type compound semiconductor emitter layer (for example, n<+> type AlxGa1-xAs emitter layer 15), having the energy band gap which is wider than the above-mentioned opposite conductivity type compound semiconductor base layer, which is doped in the high concentration with which tunnel diode characteristics will appear, and formed on the above-mentioned opposite conductivity type compound semiconductor base layer. As a result, the title semiconductor device can be manufactured easily even when it has very simple constitution using no super-lattice layer. |
