| 摘要 |
PURPOSE:To make it possible to use a wafer having an orientation flat of the direction <110> by patterning an insulating film in a specific direction, and working a seed crystal into a recessed L-like shape or a combination thereof. CONSTITUTION:On an insulating film 2 patterned in parallel with the direction <110> 3, amorphous Si is deposited, which is heated to about 600 deg.C, forming a seed crystal into a recessed L-like shape. With this, the amorphous Si layer shows a fast crystal growth in the direction <100> 4 with a seed crystal part 1 of the substrate as the starting point. At this time, different from the previous case that the growth was made on a SiO2 pattern parallel with the direction <100>, there is no introduction of twir or transition onto the single crystal, whereby a good crystal can grow.
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