Apparatus for heating semiconductor wafers.

摘要

Radiation heating of a semiconductor wafer employs first and second pluralities (30; 32) of spaced and skewed elongate parallel lamps (1 to 10: 11 to 20). Lamps in each plurality are grouped beginning with the innermost lamps and extending to the outermost lamps. Each group of lamps in one plurality of lamps are interconnected with a group of lamps in the other plurality of lamps whereby the interconnected groups of lamps are simultaneously and equally energized. Lamp voltage is modulated in accordance with a preestablished table for each size of wafer and temperature cycle. Alternatively, temperature sensors (38) can be employed to provide feedback to a computer controlled modulator. The lamps in the different groups can be selected to have different steady state power intensities for a given voltage thereby to establish a desired temperature gradient.