发明名称 Heat sink contact layer of solder - providing direct contact between semiconductor substrate and heat sink
摘要 <p>The heat sink (1) is a block of copper with a thin e.g. 2000 Angstroms, platinum surface layer (2). A layer (3) of a gold and tin alloy is applied by cathodic sputtering. The ratio between the gold and tin content is 2 to 31. A layer (4) of pure tin is then applied followed by a final layer (5) of gold and tin, similar to the first (3). The sputtering operations are performed at a power of 500 watts at a pressure of between 1 and 10 microbars. The total thickness of the three sputtered layers is about 5 microns. When the layers have been applied, the heat sink is heated to a temp. of 278 deg. C to form a eutectic solder combination.</p>
申请公布号 NL8700967(A) 申请公布日期 1988.11.16
申请号 NL19870000967 申请日期 1987.04.24
申请人 DRUKKER INTERNATIONAL B.V. TE CUIJK. 发明人
分类号 H01L23/373;H01L23/492;(IPC1-7):H01L21/58 主分类号 H01L23/373
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