| 摘要 |
PURPOSE:To improve reliability by gradually increasing the aluminum composition of a GaAlAs layer for forming an active layer adjacent to a GaAs substrate in its thicknesswise direction to reduce a stress distortion between a clad layer having high aluminum composition and a buffer layer. CONSTITUTION:A Ga1-wAlwAs buffer layer 2, an n-type AlxGa1-xAs clad layer 3, an AlyGa1-yAs active layer 4, a p-type AlxGa1-xAs clad layer 5, an n-type AlxGa1-xAs current narrowing layer 6 are sequentially crystal-grown on an n-type GaAs substrate 1. Here, when the layer 2 is grown, aluminum composition is gradually increased from a direction of the substrate 1 to vary to the same aluminum composition as that of the layer 3. Thus, a stress distortion generated from the layer 3 having high aluminum composition can be reduced to improve reliability. |
