| 摘要 |
<p>PURPOSE:To allow the drain side and the source side of an enhancement style MOS transistor to have two states by making the enhancement MOS transistor of which drain side is electrically short-circuit with a substrate as the write state of the drain side and of which source side is electrically short-circuit with the substrate as the write state of the source side. CONSTITUTION:The drains 101-104 of an (n)-type and the sources 111-114 of the (n)-type are provided on the substrates 131-134 of a (p)-type and gate electrodes 121-124 are provided on gate insulated films 181-184. When the drain side is not the write state, the MOS transistor has drain electrodes 141 and 143 connected with only the drain and when the source side is not the write state, it has source electrodes 151 and 152 connected with only the source. When the drain side is the write state, it has drain electrodes 162 and 164 connected with both of the drain and the substrate and when the source side is the write state, it has source electrodes 173 and 174 connected with both of the source and the substrate. Thus, the information of 2 bits can be obtained by one enhancement MOS transistor.</p> |
