发明名称 MANUFACTURE OF FERROELECTRIC THIN FILM
摘要 PURPOSE:To obtain a ferroelectric thin film having the sufficient insulation withstand voltage regardless of its thinness by putting a TiO2 monocrystal substrate in the powder of lead oxide (PbO), heating it, and forming the ferroelectric (PbTiO3) thin film on the surface of the substrate. CONSTITUTION:An MgO crucible containing TiO2 monocrystal and lead oxide PbO is put in an electric furnace and heated to convert the surface of the TiO2 monocrystal into a PbTiO thin film. That is, the side where PbTiO3 is to be formed is mirror-polished with a TiO2 (rutile) monocrystal plate 3 and spatter- etched, on the other hand, the PbO (litharge) powder 4 is used, the temperature of the electric furnace 5 is increased, and the PbO gas is generated to be reacted with the TiO2 plate 3. If the temperature of the electric furnace is 800 deg.C or higher and the flow quantity of oxygen gas 7 is 200cc/min (core tube 6), the portion of TiO2 with the thickness of 100mum becomes PbTiO3. A ferroelectric thin film thus obtained has high density, a large current collecting coefficient, a flat surface, and it is made thinner.
申请公布号 JPS63279504(A) 申请公布日期 1988.11.16
申请号 JP19870114163 申请日期 1987.05.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UEDA ICHIRO
分类号 H01B3/00;C30B29/32;H01L41/39 主分类号 H01B3/00
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