| 摘要 |
PURPOSE:To enable simultaneous formation of a single-crystal silicon layer and a polycrystalline silicon layer on respective corresponding regions on a substrate, by performing ion implantation of argon or the like with appropriate implanting energy and subsequently by using a CVD method or the like to heap silicon there. CONSTITUTION:Ion implantation and sputtering processes of argon, silicon, silicon trifluoride, nitrogen, and the like are performed without removing a silicon nitride film 2 used in a LOCOS method. Thereupon, oxygen atoms are removed from a surface layer of a silicon dioxide film 3, so that only active silicon atoms are made to exist on the surface layer of the silicon dioxide film 3. When the silicon nitride film 2 is removed and next monosilane contact processing is performed at 980 deg.C under a normal pressure, a p-type single-crystal silicon film 4 and a low-resistance polycrystalline silicon layer 5 are made to grow on an n-type silicon substrate 1 and on the silicon dioxide film 3, respectively. The p-type single-crystal silicon film 4 and the low-resistance polycrystalline silicon layer 5, growing respectively, are upgraded in their film qualities.
|
