HIGH FREQUENCY SEMICONDUCTOR DEVICE

摘要

PURPOSE:To attain ease of large power and to suppress the loss at a high frequency to a small value by forming a transistor(TR) and an antenna integratedly on one and same semiconductor substrate and connecting electrodes of the TR and the antenna directly or through an impedance matching circuit mutually. CONSTITUTION:An FET region 2 as the TR region having a power amplification function and a planer antenna 3 as the radiating part of a microwave are formed on one and same major side of a semi-insulating GaAs substrate 1. A filter section 4 offering a high impedance to a specific frequency and being in the open state when viewed equivallently from the antenna is connected to one terminal of the planer antenna 3 and a drain bias terminal 5 as a terminal from which a DC bias is given to the drain of the FET is arranged to the other terminal. Thus, since the TR and the antenna are formed on one and same semiconductor substrate while being connected directly mutually without using an external connection means for a waveguide or the like in this way, the size of the transmission system of microwave communication is reduced.