| 摘要 |
PURPOSE:To miniaturize a semiconductor memory without reducing the reliability of a capacitor for storing charge by disposing at least part of the capacitor for storing charge at the top of a data line. CONSTITUTION:A capacitor made of a capacitor lower electrode 1-16, a capacitor insulating film 1-17, and a plate electrode 1-18 is disposed through an interlayer insulating film 1-13 at the top of a data line 1-12, and a contact hole 1-14 is formed to have a communication between the electrode 1-15 and a diffused layer 1-6. With such a structure, a contact hole 1-11 does not have an opening in the electrode 18, the electrode 1-18 and the hole 1-11 are not interfered in a positional manner at all; it is unnecessary that a margin of matching the positions is considered. Accordingly, the electrode 1-18 is formed integrally substantially on the whole surface of a cell. Thus, it can be miniaturized without reducing reliability. |
