发明名称 SEMICONDUCTOR TYPE GAS SENSOR
摘要 PURPOSE:To obtain a sensor with a high strength highly sensitive to a combustible gas, by forming a gas sensing layer from a mixture of particle supporting platinum or palladium on an active alumina and a particle supporting platinum or palladium on stannic oxide. CONSTITUTION:A mixture of a powder supporting platinum or palladium or a mixture of platinum and palladium on an active alumina and a powder supporting at least one component of platinum and palladium on stannic oxide is formed into a paste and applied on electrodes 21 and 22 mounted on an alumina substrate 1 to form a gas sensing layer 3. After two hours of drying at 110 deg.C, heat treatment is performed for 15min at 800 deg.C to fasten the gas sensing layer 3 on the substrate 1. Then, leads 51, 52, 61 and 62 are welded on a heater 4 mounted on the back of the electrodes 21 and 22 to form a semiconductor type gas sensor.
申请公布号 JPS63279150(A) 申请公布日期 1988.11.16
申请号 JP19870113956 申请日期 1987.05.11
申请人 FUJI ELECTRIC CO LTD 发明人 OCHIWA SHINICHI
分类号 G01N27/12 主分类号 G01N27/12
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