发明名称 MEMORY DEVICE
摘要 PURPOSE:To facilitate high integration by arranging the flip-flop circuit of a 1st conductive type and 2nd conductive type by separating individually between a pair of bit lines and respectively performing the sensing motion and restoring motion corresponding to a cell by the respective conductive type flip-flop circuit. CONSTITUTION:An N-type flip-flop circuit 5 and P-type flip-flop circuit 6 are separately arranged to perform a sensing motion and restoring motion respectively by controlling the MOS transistors 20-24 which are each a switching means. The number of elements of a sensing amplifier per block (cell alley) is reduced to 1/2. The increase in the occupied area can be prevented even in the case of the number of block divisions being made larger.
申请公布号 JPS63279492(A) 申请公布日期 1988.11.16
申请号 JP19870113258 申请日期 1987.05.09
申请人 SONY CORP 发明人 MIYABAYASHI MASAYUKI
分类号 G11C11/401;G11C11/34 主分类号 G11C11/401
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