| 摘要 |
PURPOSE:To enable the high speed reading motion of a semiconductor memory device by releasing the clamp motion on high level of the output signal of a logical circuit at the changing time of an input signal and overshooting the rise of the output signal of an output circuit. CONSTITUTION:At the changing time of input signals A0, -A0, ..., At-1, -At-1 the motion of a clamp circuit 3 is temporarily stopped, and at this time the high level of the output of a logical circuit 1 is not clamped. Namely, the high level of the output signal Xi of an output circuit 2 is not clamped out becomes of higher level and is restored to a stabilized high level again because the variation in the input signal is temporary. In other words, the signal Xi is subjected to overshooting at the rising time of an output signal Xi.
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