| 摘要 |
PURPOSE:To form metal patterns of small interval at the side of a protrusion shape in a self-aligning manner by utilizing a residue generated at the time of removing a second thin film layer as a mask at the time of removing a first thin film layer. CONSTITUTION:The whole surface of a thin film layer 6 is etched by ion milling, etc. Since a thin film layer 5 is formed by reflecting a protrusion shape 2 at this time, the residue 6a of the layer 6 not removed is generated under the step of the layer 6. Then, the whole surface of the layer 5 is etched by RIE, etc., to remove the layer 5. In this case, since the residue 6a of the layer 6 can be utilized as a mask, part 5a of the layer 5 under the residue 6a remains. An insulating layer 7 of small width W is formed by the residue 6a of the layer 6 and the part 5a of the layer 5. Accordingly, metal patterns of small interval can be formed at the side part of the protrusion shape in a self-aligning manner.
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