发明名称 MANUFACTURING OF HIGH-TEMPERATURE SUPERCONDUCTING FILM
摘要 PURPOSE:To obtain a high temperature critical value by spattering or evaporating a ceramic material which has a specified composition and is of a perovskite structure or a structure similar to the K2NiF4 type, and then performing a prescribed heat-treatment. CONSTITUTION:By using a ceramic material, which has a composition of AxByOz, and has a perovskite structure or a structure similar to the K2NiF4 type, where A are transition elements of not less than two kinds which are chosen from among Ba, Sr, Ra, Sc, Y, La and other rare earth elements, B are elements of transition metal, such as Cu and the like, and then, x=1-2, y=1 and z=3-4, a thin film is formed on a substrate by means of a spattering method or a depositing method. Said spattering or deposition is performed in a gas atmosphere including at least not less than 10% of oxygen while the temperature of the substrate is kept at about 500-900 deg.C. The film is heat- treated for 2-24 hours at about 600-1,000 deg.C in said oxygen gas atmosphere.
申请公布号 JPS63276824(A) 申请公布日期 1988.11.15
申请号 JP19870110508 申请日期 1987.05.08
申请人 HITACHI LTD 发明人 TAKAYAMA SHINJI;FUKAZAWA TOKUMI;AIDA TOSHIYUKI;TAKAGI KAZUMASA;ITO YUKIO
分类号 H01L39/24;C23C14/08;C23C14/24;C23C14/34;C30B29/22;C30B33/00;C30B33/02;H01B12/06;H01B13/00;H01L39/12 主分类号 H01L39/24
代理机构 代理人
主权项
地址
您可能感兴趣的专利